DMN100 features ? extremely low on-resistance: 170m @ v gs = 4.5v ? high drain current: 1.1a ? ideal for notebook computer, portable phone, pcmcia cards, and battery powered circuits ? esd protected gate ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sc59 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - matte ti n annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.014 grams (approximate) ordering information (note 3) part number case packaging DMN100-7-f sc59 3000/tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. no purposely added lead. halogen and antimony free. marking information date code key year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 code t u v w x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sc59 top view equivalent circuit to p view esd protected d s g source gate protection diode gate drain m11 = product type marking code ym = date code marking y = year (ex: t = 2006) m = month (ex: 9 = september) m11 ym n-channel enhancement mode mosfet 1 of 2 sales@zpsemi.com www.zpsemi.com
maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage continuous v gss 20 v drain current continuous pulsed i d 1.1 4.0 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation p d 500 mw thermal resistance, junction to ambient r ja 250 k/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current @ t j = 25 c @ t j = 125c i dss ? 1.0 10 a v ds = 24v, v gs = 0v gate-body leakage i gss ? 100 na v gs = 12v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs ( th ) 1.0 ? 3.0 v v ds = 10v, i d = 1.0ma static drain-source on-resistance r ds (on) ? ? 0.170 0.150 v gs = 4.5v, i d = 0.5a v gs = 10v, i d = 1.0a forward transconductance g fs 1.3 2.4 ? s v ds = 10v, i d = 0.5a dynamic characteristics input capacitance c iss ? 150 ? pf v ds = 10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 90 ? pf reverse transfer capacitance c rss ? 30 ? pf total gate charge q g ? 5.5 ? nc v ds = 24v, i d = 1.0a, v gs = 10v gate-to-source charge q g s ? 0.8 ? nc gate-to-drain charge q g d ? 1.3 ? nc switching characteristics turn-on delay time t d ( on ) ? 10 ? ns v dd = 10v, i d = 0.5a, v gs = 5.0v, r gen = 50 turn-off delay time t d ( off ) ? 25 ? ns turn-on rise time t r ? 15 ? ns turn-off fall time t f ? 45 ? ns source-drain ratings (body diode) continuous source current i s ? ? 0.54 a ? pulse source current i sm ? ? 4.0 a ? forward voltage v sd ? ? 1.2 v i f = 1.0a, v gs = 0v reverse recovery time t r r ? 35 ? ns i f = 1.0a, di/dt = 50a/ s notes: 2. pulse width 300 s, duty cycle 2%. DMN100 n-channel enhancement mode mosfet 2 of 2 sales@zpsemi.com www.zpsemi.com
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